收藏本站
2SK4124
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
min
Ratings
typ
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
V(BR)DSS
IDSS
IGSS
ID=10mA, VGS=0V
VDS=400V, VGS=0V
VGS=±30V, VDS=0V
500
100
±100
V
μ A
nA
Cutoff Voltage
Forward Transfer Admittance
VGS(off)
| yfs |
VDS=10V, ID=1mA
VDS=10V, ID=10A
3
4.9
9.7
5
V
S
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=8A, VGS=10V
VDS=30V, f=1MHz
See Fig.2
VDS=200V, VGS=10V, ID=20A
IS=20A, VGS=0V
0.33
1200
250
55
26.5
95
145
58
46.6
8.7
27.3
1.0
0.43
1.3
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Fig.1 Avalanche Resistance Test Circuit
Fig.2 Switching Time Test Circuit
≥ 50 Ω
RG
L
10V
0V
VIN
VIN
VDD=200V
ID=10A
RL=20 Ω
10V
0V
50 Ω
2SK4124
VDD
PW=10 μ s
D.C. ≤ 0.5%
G
D
VOUT
2SK4124
Ordering Information
P.G
RGS=50 Ω
S
2SK4124-1E
Device
Package
TO-3P-3L
Shipping
30pcs./magazine
memo
Pb Free
No. A0746-2/7
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
2SK4125 MOSFET N-CH 600V 17A TO-3PB
2V7002LT1G MOSFET N-CH 60V 115MA SOT-23-3
2V7002WT1G MOSFET N-CH 60V 310MA SC70-3
30 PSI-G-4V SENSOR 30PSIG 4V DUAL
3003308 SHIELDING TAPE COPPER 8MMX33M
3003310 SHIELDING TAPE COPPER 10MMX33M
3003320 SHIELDING TAPE COPPER 20MMX33M
3003325 SHIELDING TAPE COPPER 25MMX33M
相关代理商/技术参数
2SK4124_0712 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
2SK4124_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
2SK4124-1E 制造商:ON Semiconductor 功能描述:NCH 10V DRIVE SERIES - Ammo Pack 制造商:ON Semiconductor 功能描述:FNFLD - NCH 10V DRIVE SERIES
2SK4124-1EX 制造商:ON Semiconductor 功能描述:NCH 10V DRIVE SERIES
2SK4125 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2SK4125_0712 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
2SK4125_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
2SK4125-1E 功能描述:MOSFET NCH 10V DRIVE SERIES RoHS:否 制造商:NXP Semiconductors 晶体管极性:N-Channel 汲极/源极击穿电压:30 V 闸/源击穿电压: 漏极连续电流:180 mA 电阻汲极/源极 RDS（导通）:4.5 Ohms 配置: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-416 封装:Reel